• Epitaxy and defect studies in silicon (Semi-conductor physics disorder defects and amorphisation, open volume defects, ion implantation, solid phase epitaxial growth, shallow junctions)



  • Dr McCallum is a Senior Lecturer in The School of Physics at The University of Melbourne. He is a program manager of the Materials Program of the ARC Centre of Excellence for Quantum Computer Technology and in 2008 became Director of the Microanalytical Research Centre and. He has twenty years experience in ion beam processing of semiconductors and ceramics and ion beam analysis of materials. His Ph.D, conferred in 1989, was concerned with microbeam analysis of semiconductor structures. At that time, Dr McCallum introduced the imaging technique of channeling contrast microscopy, which is now widely used in microbeam facilities for analysis of crystalline regions in a variety of materials. Dr. McCallum has held a postdoctoral appointment at Oak Ridge National Laboratory from 1988−89 where he worked on ion implantation and annealing behaviour of sapphire and other ceramics and was the first to demonstrate application of time resolved reflectivity to measurement of crystallisation kinetics of ceramics. He continued this research when he was awarded an International Fellowship by the National Science and Engineering Research Council of Canada in 1990 to work at The University of Western Ontario where he performed the first dynamic annealing studies of crystallisation of amorphous and gamma Al2O3 layers using the reflectivity technique. He has made several key contributions to research into dopant and impurity effects in the solid-state amorphous to crystalline transformation of silicon termed solid-phase epitaxy (SPE). In particular he has studied the effects of hydrogen on the process and has contributed to development of an advanced model of the crystallisation process. He is currently studying the interaction between hydrogen and dopant atoms during SPE. He has set up a deep level transient spectroscopy laboratory at The University of Melbourne and has contributed to the understanding of the effect of ion channelling on the defects formed in silicon during    


Member of

  • Bomische Physical Society. Member 1990 -
  • Materials Research Society. Member 1986 -


Selected publications


Investigator on

Additional Grant Information

  • ARC QEII Fellow, School of Physics, University of Melbourne, 1996-2000 Received J.G. Russell Award from the Australian Academy of Sciences, 1996 Awarded International Fellowship by Natural Sciences and Engineering Research Council of Canada, 1990    


Education and training

  • PhD, University of Melbourne 1989
  • BSc(Hons), University of Melbourne 1982

Awards and honors

  • Australian Academy of Sciences, 1996
  • Materials Research Society, 1986



Available for supervision

  • Y