Jeffrey McCallum

Surface transfer doping of diamond using solution-processed molybdenum trioxide

K Xing, W Li, E Della Gaspera, J van Embden, L Zhang, SA Yianni, DL Creedon, T Wang, JC McCallum, L Wang, J Huang, CI Pakes, DC Qi

Journal article  |  2021  |  Carbon

Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation

D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson

Journal article  |  2021  |  Physical Review Materials

Piezoresistance in Defect-Engineered Silicon

H Li, A Thayil, CTK Lew, M Filoche, BC Johnson, JC McCallum, S Arscott, ACH Rowe

Journal article  |  2021  |  Physical Review Applied

High-resolution spectroscopy of individual erbium ions in strong magnetic fields

Gabriele G de Boo, Chunming Yin, Milos Rancic, Brett C Johnson, Jeffrey C McCallum, Matthew J Sellars, Sven Rogge

Journal article  |  2020  |  Physical Review B

Investigation of charge carrier trapping in H-terminated diamond devices

CT-K Lew, N Dontschuk, DA Broadway, J-P Tetienne, JC McCallum, LCL Hollenberg, BC Johnson

Journal article  |  2020  |  Applied Physics Letters

High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond

Kaijian Xing, Sa Zhang, Alexander Tsai, Haiyan Xiao, Daniel L Creedon, Steve A Yianni, Jeffrey C McCallum, Christopher Pakes, Dong-Chen Qi

Journal article  |  2020  |  Diamond and Related Materials

Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond

Kaijian Xing, Daniel L Creedon, Steve A Yianni, Golrokh Akhgar, Lei Zhang, Lothar Ley, Jeffrey C McCallum, Dong-Chen Qi, Christopher Pakes

Journal article  |  2020  |  Carbon

Scanned Single-Electron Probe inside a Silicon Electronic Device

Kevin SH Ng, Benoit Voisin, Brett C Johnson, Jeffrey C McCallum, Joe Salfi, Sven Rogge

Journal article  |  2020  |  ACS Nano

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and..

Epitaxial Formation of SiC on (100) Diamond

Alexander Tsai, Alireza Aghajamali, Nikolai Dontschuk, Brett C Johnson, Muhammad Usman, Alex K Schenk, Michael Sear, Christopher I Pakes, Lloyd CL Hollenberg, Jeffrey C McCallum, Sergey Rubanov, Anton Tadich, Nigel A Marks, Alastair Stacey

Journal article  |  2020  |  ACS Applied Electronic Materials

We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice ..

Engineering long spin coherence times of spin-orbit qubits in silicon

Takashi Kobayashi, Joseph Salfi, Cassandra Chua, Joost van der Heijden, Matthew G House, Dimitrie Culcer, Wayne D Hutchison, Brett C Johnson, Jeff C McCallum, Helge Riemann, Nikolay Abrosimov, Peter Becker, Hans-Joachim Pohl, Michelle Y Simmons, Sven Rogge

Journal article  |  2020  |  Nature Materials

Electron-spin qubits have long coherence times suitable for quantum technologies. Spin–orbit coupling promises to greatly improve ..