Jeffrey McCallum

Donor-based qubits for quantum computing in silicon

JC McCallum, BC Johnson, T Botzem

Journal article  |  2021  |  Applied Physics Reviews

Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond

Steve A Yianni, Daniel L Creedon, Alex K Schenk, Kaijian Xing, Golrokh Akhgar, David I Hoxley, Lothar Ley, Jeffrey C McCallum, Christopher I Pakes

Journal article  |  2021  |  DIAMOND AND RELATED MATERIALS

The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hy..

Surface transfer doping of diamond using solution-processed molybdenum trioxide

Kaijian Xing, Wei Li, Enrico Della Gaspera, Joel van Embden, Lei Zhang, Steve A Yianni, Daniel L Creedon, Tony Wang, Jeffrey C McCallum, Linjun Wang, Jian Huang, Christopher Pakes, Dong-Chen Qi

Journal article  |  2021  |  CARBON

The surface of hydrogen-terminated diamond (H-terminated diamond) supports a p-type surface conductivity when interfaced with high..

Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators

Bin-Bin Xu, Gabriele G de Boo, Brett C Johnson, Milos Rancic, Alvaro Casas Bedoya, Blair Morrison, Jeffrey C McCallum, Benjamin J Eggleton, Matthew J Sellars, Chunming Yin, Sven Rogge

Journal article  |  2021  |  PHYSICAL REVIEW APPLIED

Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of suc..

Piezoresistance in Defect-Engineered Silicon

H Li, A Thayil, CTK Lew, M Filoche, BC Johnson, JC McCallum, S Arscott, ACH Rowe

Journal article  |  2021  |  PHYSICAL REVIEW APPLIED

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing s..

Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation

D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson

Journal article  |  2021  |  PHYSICAL REVIEW MATERIALS

Spins in the "semiconductor vacuum"of silicon-28 (Si28) are suitable qubit candidates due to their long coherence times. An isotop..

High-resolution spectroscopy of individual erbium ions in strong magnetic fields

Gabriele G de Boo, Chunming Yin, Milos Rancic, Brett C Johnson, Jeffrey C McCallum, Matthew J Sellars, Sven Rogge

Journal article  |  2020  |  Physical Review B: Condensed Matter and Materials Physics

In this paper, we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine thei..

Investigation of charge carrier trapping in H-terminated diamond devices

CT-K Lew, N Dontschuk, DA Broadway, J-P Tetienne, JC McCallum, LCL Hollenberg, BC Johnson

Journal article  |  2020  |  APPLIED PHYSICS LETTERS

Surfaces and interfaces can dominate charge carrier transport dynamics in electronic devices, impeding realization of a material's..

High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond

Kaijian Xing, Sa Zhang, Alexander Tsai, Haiyan Xiao, Daniel L Creedon, Steve A Yianni, Jeffrey C McCallum, Christopher Pakes, Dong-Chen Qi

Journal article  |  2020  |  DIAMOND AND RELATED MATERIALS

Diamond exhibits many desirable properties that could benefit the development of future carbon-based electronic devices. Its hydro..

Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond

Kaijian Xing, Daniel L Creedon, Steve A Yianni, Golrokh Akhgar, Lei Zhang, Lothar Ley, Jeffrey C McCallum, Dong-Chen Qi, Christopher Pakes

Journal article  |  2020  |  CARBON

Hydrogen-terminated diamond possesses an intriguing p-type surface conductivity which is induced via thermodynamically driven elec..