Dr McCallum is a Senior Lecturer in The School of Physics at The University of Melbourne. He is a program manager of the Materials Program of the ARC Centre of Excellence for Quantum Computer Technology and in 2008 became Director of the Microanalytical Research Centre and.
He has twenty years experience in ion beam processing of semiconductors and ceramics and ion beam analysis of materials. His Ph.D, conferred in 1989, was concerned with microbeam analysis of semiconductor structures. At that time, Dr McCallum introduced the imaging technique of channeling contrast microscopy, which is now widely used in microbeam facilities for analysis of crystalline regions in a variety of materials. Dr. McCallum has held a postdoctoral appointment at Oak Ridge National Laboratory from 1988−89 where he worked on ion implantation and annealing behaviour of sapphire and other ceramics and was the first to demonstrate application of time resolved reflectivity to measurement of crystallisation kinetics of ceramics. He continued this research when he was awarded an International Fellowship by the National Science and Engineering Research Council of Canada in 1990 to work at The University of Western Ontario where he performed the first dynamic annealing studies of crystallisation of amorphous and gamma Al2O3 layers using the reflectivity technique. He has made several key contributions to research into dopant and impurity effects in the solid-state amorphous to crystalline transformation of silicon termed solid-phase epitaxy (SPE). In particular he has studied the effects of hydrogen on the process and has contributed to development of an advanced model of the crystallisation process. He is currently studying the interaction between hydrogen and dopant atoms during SPE. He has set up a deep level transient spectroscopy laboratory at The University of Melbourne and has contributed to the understanding of the effect of ion channelling on the defects formed in silicon during ion implantation. He has also examined the effect of ion implantation and rapid thermal annealing on the density of charge traps at the interface between a high-quality thermal SiO2 layer and the silicon substrate and has contributed to the development of processing techniques which yield very low trap densities suitable for solid-state quantum computer development. Since 1993, he has supervised four Ph.Ds and one M.Sc that have been awarded on topics related to this proposal. He has held a Visiting Fellow position with the Department of Electronic Material Engineering at ANU since 1994 and is skilled in the operation of ion implantation facilities.
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FEATURED Journal article
MoO3 induces p-type surface conductivity by surface transfer doping in diamond
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7
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4
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Honours, Awards and Fellowships
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Positions
Associate Professor
Physics
Member
Bomische Physical Society
Member
Materials Research Society
Education
Doctor of Philosophy
University of Melbourne
Bachelor of Science (Honours)
University of Melbourne