Daniel Pyke

Activation energy and blistering rate in hydrogen-implanted semiconductors

DJ Pyke, RG Elliman, JC McCallum

Journal article  |  2012  |  Materials Research Society Symposium Proceedings

Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time,..

Correlating properties of PECVD SiNx layers to deposition parameters

K Vora, K Belay, DJ Pyke, F Karouta, C Jagadish

Conference Proceedings  |  2010  |  Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stre..

Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

DJ Pyke, JC McCallum, BC Johnson

Journal article  |  2010  |  JOURNAL OF APPLIED PHYSICS

The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystalli..

Hydrogen in amorphous Si and Ge during solid phase epitaxy

BC Johnson, P Caradonna, DJ Pyke, JC McCallum, P Gortmaker

Journal article  |  2010  |  THIN SOLID FILMS

Studies into the effect of hydrogen on the kinetics of solid phase epitaxy (SPE) in amorphous Si (a-Si) and Ge (a-Ge) are presente..

Hydrogen Platelet Evolution in Mechanically Strained Silicon

DJ Pyke, RG Elliman, JC McCallum

Conference Proceedings  |  2010  |  PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010)

The effect of intrinsic and applied stress on hydrogen diffusion and trapping are studied by elastic-recoil detection (ERD), Ruthe..

Recent insights in solid phase epitaxy of silicon and germanium

BC Johnson, N Stravrius, S Kandasamy, D Pyke, A Holland, JC McCallum

Journal article  |  2010  |  ECS Transactions

The crystallization of amorphous layers via solid phase epitaxy (SPE) is commonly used in semiconductor device fabrication to acti..