Laurens Willems Van Beveren

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

LH Willems van Beveren, DL Creedon, N Eikenberg, K Ganesan, BC Johnson, G Chimowa, D Churochkin, S Bhattacharyya, S Prawer

Journal article  |  2020  |  Physical Review B

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

LH Willems van Beveren, R Liu, H Bowers, K Ganesan, BC Johnson, JC McCallum, S Prawer

Journal article  |  2016  |  Journal of Applied Physics

Strong and Tunable Spin-Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices

Golrokh Akhgar, Oleh Klochan, Laurens H Willems van Beveren, Mark T Edmonds, Florian Maier, Benjamin J Spencer, Jeffrey C McCallum, Lothar Ley, Alex R Hamilton, Christopher I Pakes

Journal article  |  2016  |  Nano Letters

Spin-Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond

Mark T Edmonds, Laurens H Willems van Beveren, Oleh Klochan, Jiri Cervenka, Kumar Ganesan, Steven Prawer, Lothar Ley, Alexander R Hamilton, Christopher I Pakes

Journal article  |  2015  |  Nano Letters

Indium tin oxide film characterization using the classical Hall Effect

LHW van Beveren, E Panchenko, N Anachi, L Hyde, D Smith, TD JAMES, A Roberts, JC McCallum

Conference Proceedings  |  2014  |  2014 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2014)

Development Of Nanowire Devices With Quantum Functionalities

Michael Stuiber, Laurens H Willems van Beveren, Brett C Johnson, Walter M Weber, Andre Heinzig, Juergen Beister, David N Jamieson, Jeffrey C McCallum

Conference Proceedings  |  2014  |  2014 Conference on Optoelectronic and Microelectronic Materials & Devices

CMOS-Compatible Nanowire Biosensors

Thanh C Nguyen, Wanzhi Qiu, Matteo Altissimo, Paul G Spizzirri, Laurens H Willems van Beveren, Efstratios Skafidas

Book Chapter  |  2013

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Laurens H Willems van Beveren, Kuan Y Tan, Nai-Shyan Lai, Oleh Klochan, Andrew S Dzurak, Alex R Hamilton

Journal article  |  2012  |  Materials Science Forum

Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

LH Willems van Beveren, KY Tan, NS Lai, AS Dzurak, AR Hamilton

Journal article  |  2010  |  Applied Physics Letters

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

BC Johnson, JC McCallum, LH Willems van Beveren, E Gauja

Journal article  |  2010  |  Thin Solid Films