Laurens Willems Van Beveren

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

LH Willems van Beveren, DL Creedon, N Eikenberg, K Ganesan, BC Johnson, G Chimowa, D Churochkin, S Bhattacharyya, S Prawer

Journal article  |  2020  |  PHYSICAL REVIEW B

We present a study of the structural and electronic properties of ultrananocrystalline diamond films that were modified by adding ..

G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond

Golrokh Akhgar, Daniel L Creedon, Laurens H Willems van Beveren, Alastair Stacey, David I Hoxley, Jeffrey C McCallum, Lothar Ley, Alex R Hamilton, Christopher I Pakes

Journal article  |  2018  |  APPLIED PHYSICS LETTERS

Hydrogen-terminated diamond possesses a quasi two-dimensional, sub-surface hole accumulation layer with a strong and tunable spin-..

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

LH Willems van Beveren, R Liu, H Bowers, K Ganesan, BC Johnson, JC McCallum, S Prawer

Journal article  |  2016  |  JOURNAL OF APPLIED PHYSICS

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamon..

Strong and Tunable Spin-Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices

Golrokh Akhgar, Oleh Klochan, Laurens H Willems van Beveren, Mark T Edmonds, Florian Maier, Benjamin J Spencer, Jeffrey C McCallum, Lothar Ley, Alex R Hamilton, Christopher I Pakes

Journal article  |  2016  |  NANO LETTERS

Hydrogen-terminated diamond possesses due to transfer doping a quasi-two-dimensional (2D) hole accumulation layer at the surface w..

Spin-Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond

Mark T Edmonds, Laurens H Willems van Beveren, Oleh Klochan, Jiri Cervenka, Kumar Ganesan, Steven Prawer, Lothar Ley, Alexander R Hamilton, Christopher I Pakes

Journal article  |  2015  |  NANO LETTERS

Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite bei..

Indium tin oxide film characterization using the classical Hall Effect

LHW van Beveren, E Panchenko, N Anachi, L Hyde, D Smith, TD JAMES, A Roberts, JC McCallum

Conference Proceedings  |  2014

We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques..

Development Of Nanowire Devices With Quantum Functionalities

Michael Stuiber, Laurens H Willems van Beveren, Brett C Johnson, Walter M Weber, Andre Heinzig, Juergen Beister, David N Jamieson, Jeffrey C McCallum

Conference Proceedings  |  2014  |  2014 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2014)

We describe a process to fabricate doped silicon nanowires in a 4-terminal setup.

CMOS-Compatible Nanowire Biosensors

Thanh C Nguyen, Wanzhi Qiu, Matteo Altissimo, Paul G Spizzirri, Laurens H Willems van Beveren, Efstratios Skafidas

Book Chapter  |  2013

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Laurens H Willems van Beveren, Kuan Y Tan, Nai-Shyan Lai, Oleh Klochan, Andrew S Dzurak, Alex R Hamilton

Journal article  |  2012  |  ADVANCED MATERIALS AND NANOTECHNOLOGY

A common issue in low temperature measurements of enhancement-mode metal-oxidesemiconductor (MOS) field-effect transistors (FETs) ..

Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime

LH Willems van Beveren, KY Tan, NS Lai, AS Dzurak, AR Hamilton

Journal article  |  2010  |  APPLIED PHYSICS LETTERS