Brett Johnson

Piezoresistance in Defect-Engineered Silicon

H Li, A Thayil, CTK Lew, M Filoche, BC Johnson, JC McCallum, S Arscott, ACH Rowe

Journal article  |  2021  |  Physical Review Applied

High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector

SG Robson, AM Jakob, D Holmes, SQ Lim, BC Johnson, DN Jamieson

Journal article  |  2021  |  Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device.

Mateusz T Ma Dzik, Arne Laucht, Fay E Hudson, Alexander M Jakob, Brett C Johnson, David N Jamieson, Kohei M Itoh, Andrew S Dzurak, Andrea Morello

Journal article  |  2021  |  Nature Communications

Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an..

Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation

D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson

Journal article  |  2021  |  Physical Review Materials

Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

Stefania Castelletto, Jovan Maksimovic, Tomas Katkus, Takeshi Ohshima, Brett C Johnson, Saulius Juodkazis

Journal article  |  2021  |  Nanomaterials

Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources o..

Coherent control of NV- centers in diamond in a quantum teaching lab

Vikas K Sewani, Hyma H Vallabhapurapu, Yang Yang, Hannes R Firgau, Chris Adambukulam, Brett C Johnson, Jarryd J Pla, Arne Laucht

Journal article  |  2020  |  American Journal of Physics

Comparison of different methods of nitrogen-vacancy layer formation in diamond for wide-field quantum microscopy

AJ Healey, A Stacey, BC Johnson, DA Broadway, T Teraji, DA Simpson, J-P Tetienne, LCL Hollenberg

Journal article  |  2020  |  Physical Review Materials

Thin layers of near-surface nitrogen-vacancy (NV) defects in diamond substrates are the workhorse of NV-based wide-field magnetic ..

High-resolution spectroscopy of individual erbium ions in strong magnetic fields

Gabriele G de Boo, Chunming Yin, Milos Rancic, Brett C Johnson, Jeffrey C McCallum, Matthew J Sellars, Sven Rogge

Journal article  |  2020  |  Physical Review B

In this paper, we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine thei..

Investigation of charge carrier trapping in H-terminated diamond devices

CT-K Lew, N Dontschuk, DA Broadway, J-P Tetienne, JC McCallum, LCL Hollenberg, BC Johnson

Journal article  |  2020  |  Applied Physics Letters

Surfaces and interfaces can dominate charge carrier transport dynamics in electronic devices, impeding realization of a material's..

Scanned Single-Electron Probe inside a Silicon Electronic Device

Kevin SH Ng, Benoit Voisin, Brett C Johnson, Jeffrey C McCallum, Joe Salfi, Sven Rogge

Journal article  |  2020  |  ACS Nano

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and..