Brett Johnson

Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars

RA Parker, N Dontschuk, S-I Sato, CT-K Lew, P Reineck, A Nadarajah, T Ohshima, BC Gibson, S Castelletto, JC McCallum, BC Johnson

Journal article  |  2021  |  Journal of Applied Physics

Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials.

Wei Yan, Brett C Johnson, Sivacarendran Balendhran, Jasper Cadusch, Di Yan, Jesús Ibarra Michel, Shifan Wang, Tian Zheng, Kenneth Crozier, James Bullock

Journal article  |  2021  |  ACS Appl Mater Interfaces

The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectron..

Donor-based qubits for quantum computing in silicon

JC McCallum, BC Johnson, T Botzem

Journal article  |  2021  |  Applied Physics Reviews

Spin-qubits based on impurities such as phosphorus in silicon (Si) have attractive attributes for the development of quantum compu..

Fluorescent Silicon Carbide Nanoparticles

Mitchell O de Vries, Shin-ichiro Sato, Takeshi Ohshima, Brant C Gibson, Jean-Marie Bluet, Stefania Castelletto, Brett C Johnson, Philipp Reineck

Journal article  |  2021  |  ADVANCED OPTICAL MATERIALS

Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many industrial applications due to its extre..

Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators

Bin-Bin Xu, Gabriele G de Boo, Brett C Johnson, Milos Rancic, Alvaro Casas Bedoya, Blair Morrison, Jeffrey C McCallum, Benjamin J Eggleton, Matthew J Sellars, Chunming Yin, Sven Rogge

Journal article  |  2021  |  PHYSICAL REVIEW APPLIED

Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of suc..

Piezoresistance in Defect-Engineered Silicon

H Li, A Thayil, CTK Lew, M Filoche, BC Johnson, JC McCallum, S Arscott, ACH Rowe

Journal article  |  2021  |  PHYSICAL REVIEW APPLIED

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing s..

High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector

SG Robson, AM Jakob, D Holmes, SQ Lim, BC Johnson, DN Jamieson

Journal article  |  2021  |  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Rutherford Backscattering Spectrometry (RBS) is a powerful ion beam analysis technique in frequent use within materials science. T..

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Mateusz T Madzik, Arne Laucht, Fay E Hudson, Alexander M Jakob, Brett C Johnson, David N Jamieson, Kohei M Itoh, Andrew S Dzurak, Andrea Morello

Journal article  |  2021  |  NATURE COMMUNICATIONS

Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an..

Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation

D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson

Journal article  |  2021  |  PHYSICAL REVIEW MATERIALS

Spins in the "semiconductor vacuum"of silicon-28 (Si28) are suitable qubit candidates due to their long coherence times. An isotop..

Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

Stefania Castelletto, Jovan Maksimovic, Tomas Katkus, Takeshi Ohshima, Brett C Johnson, Saulius Juodkazis

Journal article  |  2021  |  NANOMATERIALS

Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources o..