SURFACE DOPING OF DIAMOND: A NEW PLATFORM FOR 2D CARBON-BASED SPINTRONICS
Grant number: DP150101673 | Funding period: 2015 - 2018
This project aims to develop the hydrogen-terminated surface of diamond as a new semiconducting platform for carbon-based spintronics. It will build upon recent experimental advances that have shown diamond to possess a two-dimensional (2D) hole-based system with strong spin-orbit coupling. As a semiconductor with unique spin properties, surface conducting diamond offers considerable advantages over other 2D materials such as graphene and topological insulators. These unique properties will be exploited to realise novel semiconductor device architectures for the manipulation of spin using electric fields, and for the study of new spin transport phenomena and quasiparticle excitations at semi..View full description
Related publications (15)
High-field magnetotransport studies of surface-conducting diamonds
Kaijian Xing, Daniel L Creedon, Golrokh Akhgar, Steve A Yianni, Jeffrey C McCallum, Lothar Ley, Dong-Chen Qi, Christopher Pakes
The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for build..
Fluorination of the silicon-terminated (100) diamond surface using C60F48
Alex K Schenk, Michael J Sear, Nikolai Dontschuk, Anton Tadich, Alastair Stacey, Chris I Pakes
Fluorination of the silicon terminated (100) diamond surface under ultra-high vacuum using a molecular fluorine source (C60F48) is..
Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond
Steve A Yianni, Daniel L Creedon, Alex K Schenk, Kaijian Xing, Golrokh Akhgar, David I Hoxley, Lothar Ley, Jeffrey C McCallum, Christopher I Pakes
The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hy..
Surface transfer doping of diamond using solution-processed molybdenum trioxide
Kaijian Xing, Wei Li, Enrico Della Gaspera, Joel van Embden, Lei Zhang, Steve A Yianni, Daniel L Creedon, Tony Wang, Jeffrey C McCallum, Linjun Wang, Jian Huang, Christopher Pakes, Dong-Chen Qi
The surface of hydrogen-terminated diamond (H-terminated diamond) supports a p-type surface conductivity when interfaced with high..
High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond
Kaijian Xing, Sa Zhang, Alexander Tsai, Haiyan Xiao, Daniel L Creedon, Steve A Yianni, Jeffrey C McCallum, Christopher Pakes, Dong-Chen Qi
Diamond exhibits many desirable properties that could benefit the development of future carbon-based electronic devices. Its hydro..
Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond
Kaijian Xing, Daniel L Creedon, Steve A Yianni, Golrokh Akhgar, Lei Zhang, Lothar Ley, Jeffrey C McCallum, Dong-Chen Qi, Christopher Pakes
Hydrogen-terminated diamond possesses an intriguing p-type surface conductivity which is induced via thermodynamically driven elec..
Engineering the spin-orbit interaction in surface conducting diamond with a solid-state gate dielectric
Kaijian Xing, Alexander Tsai, Daniel L Creedon, Steve A Yianni, Jeffrey C McCallum, Lothar Ley, Dong-Chen Qi, Christopher I Pakes
Hydrogen-terminated (H-terminated) diamond, when surface transfer doped, can support a sub-surface two-dimensional (2D) hole band ..
MoO3 induces p-type surface conductivity by surface transfer doping in diamond
Kaijian Xing, Yang Xiang, Ming Jiang, Daniel L Creedon, Golrokh Akhgar, Steve A Yianni, Haiyan Xiao, Lothar Ley, Alastair Stacey, Jeffrey C McCallum, Serge Zhuiykov, Christopher Pakes, Dong-Chen Qi
Surface transfer doping of diamond using high electron affinity transition metal oxides (TMOs), such as MoO3, has emerged as a key..
Palladium forms Ohmic contact on hydrogen-terminated diamond down to 4K
Kaijian Xing, Alexander Tsai, Sergey Rubanov, Daniel L Creedon, Steve A Yianni, Lei Zhang, Wei-Chang Hao, Jincheng Zhuang, Jeffrey C McCallum, Christopher I Pakes, Dong-Chen Qi
A hydrogen-terminated diamond (H-terminated diamond) surface supports a two-dimensional (2D) p-type surface conductivity when expo..
Development of a silicon-diamond interface on (111) diamond
AK Schenk, MJ Sear, N Dontschuk, A Tsai, KJ Rietwyk, A Tadich, BCC Cowie, L Ley, A Stacey, C Pakes
We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemiss..
g-factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond
Golrokh Akhgar, Lothar Ley, Daniel L Creedon, Alastair Stacey, Jeffrey C McCallum, Alex R Hamilton, Christopher Pakes
The two-dimensional (2D) hole gas at the surface of transfer-doped diamond shows quantum-mechanical interference effects in magnet..
G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond
Golrokh Akhgar, Daniel L Creedon, Laurens H Willems van Beveren, Alastair Stacey, David I Hoxley, Jeffrey C McCallum, Lothar Ley, Alex R Hamilton, Christopher I Pakes
Hydrogen-terminated diamond possesses a quasi two-dimensional, sub-surface hole accumulation layer with a strong and tunable spin-..
P-type surface transfer doping of oxidised silicon terminated (100) diamond
Michael J Sear, Alex K Schenk, Anton Tadich, Alastair Stacey, Christopher I Pakes
High-resolution core-level photoemission was used to examine the interaction between the oxidised silicon-terminated diamond (100)..
Strong and Tunable Spin-Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices
Golrokh Akhgar, Oleh Klochan, Laurens H Willems van Beveren, Mark T Edmonds, Florian Maier, Benjamin J Spencer, Jeffrey C McCallum, Lothar Ley, Alex R Hamilton, Christopher I Pakes
Hydrogen-terminated diamond possesses due to transfer doping a quasi-two-dimensional (2D) hole accumulation layer at the surface w..