ARC CENTRE OF EXCELLENCE FOR QUANTUM COMPUTATION AND COMMUNICATION TECHNOLOGY (NON-LEAD) HOLLENBERG (ARC FUNDING)

Valley interference and spin exchange at the atomic scale in silicon

B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, MY Simmons, LCL Hollenberg, S Rogge

2020-11-30

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise ..

Comparison of different methods of nitrogen-vacancy layer formation in diamond for wide-field quantum microscopy

AJ Healey, A Stacey, BC Johnson, DA Broadway, T Teraji, DA Simpson, J-P Tetienne, LCL Hollenberg

2020-10-29

Thin layers of near-surface nitrogen-vacancy (NV) defects in diamond substrates are the workhorse of NV-based wide-field magnetic ..

Epitaxial Formation of SiC on (100) Diamond

Alexander Tsai, Alireza Aghajamali, Nikolai Dontschuk, Brett C Johnson, Muhammad Usman, Alex K Schenk, Michael Sear, Christopher I Pakes, Lloyd CL Hollenberg, Jeffrey C McCallum, Sergey Rubanov, Anton Tadich, Nigel A Marks, Alastair Stacey

2020-07-28

We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice ..

Engineering long spin coherence times of spin-orbit qubits in silicon

Takashi Kobayashi, Joseph Salfi, Cassandra Chua, Joost van der Heijden, Matthew G House, Dimitrie Culcer, Wayne D Hutchison, Brett C Johnson, Jeff C McCallum, Helge Riemann, Nikolay Abrosimov, Peter Becker, Hans-Joachim Pohl, Michelle Y Simmons, Sven Rogge

2020-07-20

Electron-spin qubits have long coherence times suitable for quantum technologies. Spin–orbit coupling promises to greatly improve ..

Framework for atomic-level characterisation of quantum computer arrays by machine learning

Muhammad Usman, Yi Zheng Wong, Charles D Hill, Lloyd CL Hollenberg

2020-03-16

Atomic-level qubits in silicon are attractive candidates for large-scale quantum computing; however, their quantum properties and ..

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Stefanie B Tenberg, Serwan Asaad, Mateusz T Madzik, Mark A Johnson, Benjamin Joecker, Arne Laucht, Fay E Hudson, Kohei M Itoh, A Malwin Jakob, Brett C Johnson, David N Jamieson, Jeffrey C McCallum, Andrew S Dzurak, Robert Joynt, Andrea Morello

2019-05-14