ARC CENTRE OF EXCELLENCE FOR QUANTUM COMPUTATION AND COMMUNICATION TECHNOLOGY (NON-LEAD) HOLLENBERG (ARC FUNDING)
Grant number: CE170100012 | Funding period: 2017 - 2025
Related publications (6)
Valley interference and spin exchange at the atomic scale in silicon
B Voisin, J Bocquel, A Tankasala, M Usman, J Salfi, R Rahman, MY Simmons, LCL Hollenberg, S Rogge
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise ..
Comparison of different methods of nitrogen-vacancy layer formation in diamond for wide-field quantum microscopy
AJ Healey, A Stacey, BC Johnson, DA Broadway, T Teraji, DA Simpson, J-P Tetienne, LCL Hollenberg
Thin layers of near-surface nitrogen-vacancy (NV) defects in diamond substrates are the workhorse of NV-based wide-field magnetic ..
Epitaxial Formation of SiC on (100) Diamond
Alexander Tsai, Alireza Aghajamali, Nikolai Dontschuk, Brett C Johnson, Muhammad Usman, Alex K Schenk, Michael Sear, Christopher I Pakes, Lloyd CL Hollenberg, Jeffrey C McCallum, Sergey Rubanov, Anton Tadich, Nigel A Marks, Alastair Stacey
We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice ..
Engineering long spin coherence times of spin-orbit qubits in silicon
Takashi Kobayashi, Joseph Salfi, Cassandra Chua, Joost van der Heijden, Matthew G House, Dimitrie Culcer, Wayne D Hutchison, Brett C Johnson, Jeff C McCallum, Helge Riemann, Nikolay Abrosimov, Peter Becker, Hans-Joachim Pohl, Michelle Y Simmons, Sven Rogge
Electron-spin qubits have long coherence times suitable for quantum technologies. Spin–orbit coupling promises to greatly improve ..
Framework for atomic-level characterisation of quantum computer arrays by machine learning
Muhammad Usman, Yi Zheng Wong, Charles D Hill, Lloyd CL Hollenberg
Atomic-level qubits in silicon are attractive candidates for large-scale quantum computing; however, their quantum properties and ..
Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Stefanie B Tenberg, Serwan Asaad, Mateusz T Madzik, Mark A Johnson, Benjamin Joecker, Arne Laucht, Fay E Hudson, Kohei M Itoh, A Malwin Jakob, Brett C Johnson, David N Jamieson, Jeffrey C McCallum, Andrew S Dzurak, Robert Joynt, Andrea Morello
We analyze the electron spin relaxation rate 1/T1 of individual ion-implanted P31 donors in a large set of metal-oxide-semiconduct..