Single Atom Defined Nanostructures: Atom-Electronics Beyond the Miniaturization Limit

Grant number: DP0986635 | Funding period: 2009 - 2013

Completed

Abstract

The emerging era of atom-electronics promises to revolutionise microelectronics in the 21st century by going beyond the conventional miniaturization limit of microelectronics. Emerging atom level fabrication and control techniques offer the promise of building devices whose fundamental components are built atom-by-atom and function under completely new rules. This Discovery Project will apply critical new theoretical tools, in partnership with leading experimental groups, to enable the exploration of this technology and the creation of new and innovative applications which will have far reaching implications in all areas of society and significant national benefit.

Related publications (8)

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Significant attention has been recently focused on the realization of high precision nanothermometry using the spin-resonance temp..

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Ab initio electronic properties of dual phosphorus monolayers in silicon

DW Drumm, MC Per, A Budi, LCL Hollenberg, SP Russo

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In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use ..

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The nitrogen-vacancy colour centre in diamond

MW Doherty, NB Manson, P Delaney, F Jelezko, J Wrachtrup, LCL Hollenberg

2013-07-01

The nitrogen-vacancy (NV) colour centre in diamond is an important physical system for emergent quantum technologies, including qu..

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Ab initio electronic properties of monolayer phosphorus nanowires in silicon

DW Drumm, JS Smith, MC Per, A Budi, LCL Hollenberg, SP Russo

2013-03-20

Epitaxial circuitry offers a revolution in silicon technology, with components that can be fabricated on atomic scales. We perform..

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Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

DW Drumm, A Budi, MC Per, SP Russo, LCL Hollenberg

2013-01-01

The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport s..

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Theory of the ground-state spin of the NV - center in diamond

MW Doherty, F Dolde, H Fedder, F Jelezko, J Wrachtrup, NB Manson, LCL Hollenberg

2012-05-03

The ground-state spin of the negatively charged nitrogen-vacancy center in diamond has been the platform for the recent rapid expa..

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The negatively charged nitrogen-vacancy centre in diamond: The electronic solution

MW Doherty, NB Manson, P Delaney, LCL Hollenberg

2011-02-01

The negatively charged nitrogen-vacancy centre is a unique defect in diamond that possesses properties highly suited to many appli..

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The foundations of the defect-molecule model of the N-V center in diamond

MW Doherty, FM Hossain, LCL Hollenberg

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The negatively charged nitrogen-vacancy center in diamond is highly suited to many quantum information processing applications. Al..

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