UNDERSTANDING THE STRUCTURE AND UNUSUAL PROPERTIES OF ION IMPLANTED AMORPHOUS GERMANIUM

Grant number: DP120103198 | Funding period: 2012 - 2014

Completed

Abstract

This project explores the properties of a semiconductor (germanium) that has become important in fast electronic applications. Its disordered form has unusual properties and their understanding is a main project aim. Outcomes are: fundamental understanding of an important material, and enabling its technological applications to be fully realised.