Kinetics of intrinsic and dopant-enhanced solid phase epitaxy in buried amorphous Si layers

Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) have been measured in buried amorphous Si (a-Si) layers produced by ion implantation. Buried a-Si layers formed by self-ion implantation provide a suitable environment for studies of the intrinsic growth kinetics of amorphous Si, free from the rate-retarding effects of H. For the first time, dopant-enhanced SPE rates have been measured under these H-free conditions. Buried a-Si layers containing uniform As concentration profiles ranging from 1-16.1 × 1019 As.cm-3 were produced by multiple-energy ion implantation and time resolved reflectivity was used to measure SPE rates over the temperature range 480-660°C. In contrast..