Journal article
Instability of nanocavities in amorphous silicon
X Zhu, JS Williams, DJ Llewellyn, JC McCallum
Applied Physics Letters | AMER INST PHYSICS | Published : 1999
DOI: 10.1063/1.123835
Abstract
The influence of implant-induced amorphization and its subsequent solid phase epitaxial growth (SPEG) on the stability of nanocavities in Si was investigated. To monitor the gettering efficiency of cavities, gold was introduced to the wafer before and after amorphization. Rutherford backscattering (RBS) and channeling combined with cross-sectional transmission electron microscopy were used to characterize the samples. The structural observations were also correlated with kinetic data from in situ SPEG measurements carried out using time-resolved reflectivity (TRR).