Journal article

MICROSTRUCTURAL CHARACTERIZATION OF IRON-ION IMPLANTATION OF SILICON-CARBIDE

LL HORTON, J BENTLEY, L ROMANA, A PEREZ, CJ MCHARGUE, JC MCCALLUM

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ELSEVIER | Published : 1992

Abstract

In order to better use implantation to improve the properties of ceramics, a detailed understanding of the nature of implanted species is needed. In this investigation, analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal α-silicon carbide implanted at room temperature with 160 keV 57Fe ions to fluences of 1, 3, and 6 × 1016 ions/cm2. RBS-ion channeling demonstrated that the implanted region was amorphous even at the lowest fluence. AEM was performed for both cross-sectional and back-thinned specimens with the highest fluence. The depth of the peak iron concentration measured with energy dispersiv..

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University of Melbourne Researchers