Photoelectrochemical behaviour of CdS 'Q-state' semiconductor particles in 10,12-nonacosadiynoic acid polymer langmuir-blodgett films

Abstract

CdS 'Q-state' semiconductor particles from 2 to 10 nm diameter were nucleated and grown in 10, 12-nonacosadiynoic acid (NCDA) polymer Langmuir-Blodgett (LB) films deposited on ITO plates. The polymerization process through exposure to UV-Visible light resulted in formation of the 'blue form' followed by the final 'red form' after 60 min. X-ray photoelectron spectroscopy (XPS) measurements confirmed the deposition of the NCDA cadmium salt and the formation of the CdS particles after exposure to H2S(g) in the LB matrix. A study of the photoelectrochemical behaviour of these systems was conducted through polarisation current-voltage (I-V) curves in the range of 0 to -1000 mV (Standard Calomel E..