Raman and rbs studies of ion implanted semiconductors

Abstract

Raman spectroscopy and Rutherford backscattering spectrometry (RBS) have been used to assess boron and silicon implants on the properties of single crystal silicon, GaAs, and CdTe. The behavior of these different semiconductors under identical implant conditions has been compared. Changes in the Raman optic phonon spectra reflect the extent of lattice damage caused by the ion implants as well as ability of various annealing procedures to remove this damage. The Raman results are generally confirmed by RBS ion-channeling measurements. Furthermore, these techniques are shown to provide complementary information on the distribution and nature of implant damage. © 1988 SPIE.