Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si
M Mastromatteo, BC Johnson, D De Salvador, E Napolitani, JC McCallum, A Carnera
JOURNAL OF APPLIED PHYSICS | AMER INST PHYSICS | Published : 2016
The redistribution of hydrogen during solid phase epitaxial regrowth (SPER) of preamorphized silicon has been experimentally investigated, modeled, and simulated for different H concentrations and temperatures. H was introduced by H implantation and/or infiltration from the sample surface during partial thermal anneals in air in the 520-620 °C temperature range. We characterized the time evolution of the H redistribution by secondary ion mass spectrometry and time resolved reflectivity. The good agreement between all experimental data and the simulations by means of full rate equation numerical calculations allows the quantitative assessment of all the phenomena involved: in-diffusion from a..View full abstract
The authors wish to thank R. Storti (University of Padova) for his technical contribution. The authors acknowledge access to ion-implantation at the ACT node of the Heavy-Ion-Accelerator Capability funded by the Australian Government under the NCRIS program.