Journal article

Quantum simulation of the Hubbard model with dopant atoms in silicon

J Salfi, JA Mol, R Rahman, G Klimeck, MY Simmons, LCL Hollenberg, S Rogge

Nature Communications | NATURE PUBLISHING GROUP | Published : 2016

University of Melbourne Researchers

Grants

Awarded by European Commission Future and Emerging Technologies Proactive Project MULTI


Awarded by ARC Centre of Excellence for Quantum Computation and Communication Technology


Awarded by US Army Research Office


Awarded by ARC Discovery Project


Awarded by Future Fellowship


Funding Acknowledgements

We thank H. Wiseman, M.A. Eriksson, M.S. Fuhrer, O. Sushkov, D. Culcer, J.-S. Caux, B. Reulet, G. Sawatzky, J. Folk, F. Remade, M. Klymenko and B. Voisin for helpful discussions. This work was supported by the European Commission Future and Emerging Technologies Proactive Project MULTI (317707), the ARC Centre of Excellence for Quantum Computation and Communication Technology (CE110001027) and in part by the US Army Research Office (W911NF-08-1-0527) and ARC Discovery Project (DP120101825). S.R. acknowledges a Future Fellowship (FT100100589). M.Y.S. acknowledges a Laureate Fellowship. The authors declare no competing financial interests.