The surface electronic structure of silicon terminated (100) diamond
AK Schenk, A Tadich, MJ Sear, D Qi, ATS Wee, A Stacey, CI Pakes
NANOTECHNOLOGY | IOP PUBLISHING LTD | Published : 2016
A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ± 0.1 eV.
Awarded by SSLS under NUS Core
Awarded by Australian Research Council (ARC) under the Centre of Excellence scheme
This work was performed in part at the Melbourne Center for Nanofabrication (MCN), in the Victorian node of the Australian National Fabrication Facility (ANFF). Experiments were performed at the soft x-ray Spectroscopy beamline of the Australian Synchrotron and the Surface, Interface and Nanostructure Science beamline of the Singapore Synchrotron Light Source. Work partly performed at SSLS under NUS Core Support C-380-003-003-001. Authors acknowledge the beamtime support from Mr Xiao Chi, Dr Xiaojiang Yu and Prof Mark Breese. This work was supported in part by the Australian Research Council (ARC) under the Centre of Excellence scheme (project No. CE110001027)