Chemical vapour deposition of diamond onto steel: the effect of a Ti implant layer

Abstract

The efficacy of high dose Ti implantation into steel to aid in the deposition diamond onto Fe based substrates is explored. Auger electron spectroscopy (AES) and Rutherford backscattering spectroscopy (RBS) measurements show that a Ti implanted (3 × 1016 ions cm-2) layer prevents the diffusion of C into Fe (6 h at 900 °C). However, no diamond (or other carbons) is deposited under these conditions. When conditions more favourable for the synthesis of diamond are employed (i.e. 1000 °C deposition) the Ti implant is only effective at preventing C diffusion and soot formation for a limited period of exposure to the plasma (5 min). For longer deposition times, soot formation is observed, presumab..