Journal article

NATURE OF DAMAGE IN DIAMOND IMPLANTED AT LOW-TEMPERATURES

C UZANSAGUY, V RICHTER, S PRAWER, Y LIFSHITZ, E GROSSMAN, R KALISH

DIAMOND AND RELATED MATERIALS | ELSEVIER SCIENCE SA LAUSANNE | Published : 1995

Abstract

The most effective scheme for electrically activating ion implanted dopants in diamond involves implantation at low temperatures (Ti ≲ 300 K) followed by rapid thermal annealing. For such implantations, all defects (both vacancies and interstitials) are believed to be "frozen in", a fact which facilitates subsequent annealing. In the present work, the nature of the defects introduced into diamond by low temperature implantations is determined by combining channelling, electrical conductivity, swelling and Raman measurements on type IIa diamonds irradiated with 320 keV Xe ions at Ti = 150 K over the dose range 1 × 1013-2 × 1016 Xe cm-2. The critical dose for amorphization was found to corresp..

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University of Melbourne Researchers