Conference Proceedings
Optical properties of Si nanocrystals formed in SiO2 by ion implantation
CW White, SP Withrow, A Meldrum, JD Budai, DM Hembree, JG Zhu, DO Henderson, S Prawer
Materials Research Society Symposium Proceedings | MATERIALS RESEARCH SOCIETY | Published : 1999
DOI: 10.1557/PROC-507-249
Abstract
Si nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.