Optimisation of sample preparation and analysis conditions for atom probe tomography characterisation of low concentration surface species

Abstract

The practicalities for atom probe tomography (APT) analysis of near-surface chemistry, particularly the distribution of low concentration elements, are presented in detail. Specifically, the challenges of surface analysis using APT are described through the characterisation of near-surface implantation profiles of low concentration phosphorus into single crystal silicon. This material system was chosen to illustrate this surface specific approach as low concentration phosphorus has significant mass spectra overlaps with silicon species and the near surface location requires particular attention to focused ion beam specimen preparation and deposition of various capping layers. Required change..