Journal article

High-Performance Field Effect Transistors Using Electronic Inks of 2D Molybdenum Oxide Nanoflakes

Manal MYA Alsaif, Adam F Chrimes, Torben Daeneke, Sivacarendran Balendhran, Darin O Bellisario, Youngwoo Son, Matthew R Field, Wei Zhang, Hussein Nili, Emily P Nguyen, Kay Latham, Joel van Embden, Michael S Strano, Jian Zhen Ou, Kourosh Kalantar-zadeh



Planar 2D materials are possibly the ideal channel candidates for future field effect transistors (FETs), due to their unique electronic properties. However, the performance of FETs based on 2D materials is yet to exceed those of conventional silicon based devices. Here, a 2D channel thin film made from liquid phase exfoliated molybdenum oxide nanoflake inks with highly controllable substoichiometric levels is presented. The ability to induce oxygen vacancies by solar light irradiation in an aqueous environment allows the tuning of electronic properties in 2D substoichiometric molybdenum oxides (MoO3-x). The highest mobility is found to be ≈600 cm2 V-1 s-1 with an estimated free electron con..

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University of Melbourne Researchers


Awarded by Australian Research Council (ARC)

Funding Acknowledgements

The authors would like to acknowledge funding support from the Australian Research Council (ARC) through Discovery Project DP140100170. The authors also would like to acknowledge the facilities, scientific and technical assistances of the Australian Microscopy and Microanalysis Research Facility (AMMRF) at RMIT University, the Micro Nano Research Facility (MNRF) at RMIT University, and the Australian Centre for Materials Science and Engineering (CMSE) of the Commonwealth Scientific and Industrial Research Organization (CSIRO), Australia.