Journal article

High-performance silicon nanowire bipolar phototransistors

SL Tan, X Zhao, K Chen, KB Crozier, Y Dan

Applied Physics Letters | American Institute of Physics | Published : 2016


Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processe..

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University of Melbourne Researchers


Awarded by National Science Foundation of China (NSFC)

Awarded by China Postdoctoral Science Foundation

Awarded by Australian Research Council

Funding Acknowledgements

This work is partly funded by the National "1000 Young Scholars" Program, the National Science Foundation of China (NSFC Grant No. 61376001), Pujiang Talent Program of the Shanghai municipal government, and the China Postdoctoral Science Foundation (Grant No. 2014M551411). K.B.C. acknowledges support from VESKI and the Australian Research Council (FT140100577 and DP150103736). The authors declare no competing financial interest.