Investigation of the structure of damage layers in TEM samples prepared using a focused ion beam

Abstract

The structure of damage layers in transmission electron microscopy (TEM) samples was investigated using focused ion beam (FIB) system. The structural damage in silicon (Si) structures after fabrication of FIB sample and local recrystallization of amorphous Si in some regions of irradiated material was discussed. Damage layers present on both sides of prepared TEM specimens posed a serious problem for high-resolution electron microscopy. The damage layer on the specimen were found to be thicker than that obtained using conventional argon ion milling.