Kelvin probe microscopy of localised potentials induced in non-conductive materials by a focused ion beam

Abstract

Kelvin probe microscopy has been used to characterise silicon dioxide exposed to gallium ion irradiation in a focused ion beam (FIB) miller. Significant localised residual charging is observed within the gallium implanted micro-volumes of non-conductive materials both prior to and following the onset of sputtering. Characteristic observed surface potentials associated with the resultant charging have been modelled, giving insight into the charging processes during implantation and sputtering. The results of this work have implications for the processing and microanalysis of non-conductive materials in FIB systems.