Analysis of integrated circuits and semiconductor materials using IBIC microscopy

Abstract

A review is given on applications of ion-beam induced charge (IBIC) microscopy. A selection of the many applications for the technique that have arisen in the past decade is presented, including imaging of memory cells, imaging of depletion regions in single field-effect transistors (FETs), measurements of single-event upset cross sections, radiation damage in working devices, and the mapping of electrically active defects.