Conference Proceedings
A tight-binding study of channel modulation in atomic-scale Si:P nanowires
H Ryu, S Lee, B Weber, S Mahapatra, MY Simmons, LCL Hollenberg, G Klimeck
International Conference on Simulation of Semiconductor Processes and Devices SISPAD | IEEE | Published : 2013
Abstract
It has been well understood that ultrathin, highly P δ-doped Si (Si:P) nanowires are metallic at charge-neutrality (Ref. [5]). This work extends the scope of tight-binding modeling beyond charge-neutrality to examine the channel modulation of a 1.5nm wide, 1/4 monolayer(ML)-doped Si:P nanowire and its effect on the channel conductance. Subband-anticrossing plays a key role in the channel modulation, creating a local minimum in the ballistic conductance as the channel is occupied with more electrons. While the channel modulation causes a fluctuation in the conductance, nanowires still remain metallic boding well for their utility as potential interconnects. © 2013 IEEE.
Grants
Awarded by US National Science Foundation (NSF)
Awarded by US NSF
Awarded by US Army Research Office
Awarded by Australian Research Council (ARC) Centre of Excellence for Quantum Computation and Communication Technology
Awarded by EDucation-research Integration through Simulation On the Net (EDISON) - Ministry of Education, Science and Technology, Republic of Korea
Awarded by National Research Foundation of Korea
Funding Acknowledgements
This research was conducted by the nanoHUB.org computing resources operated by the Network for Computational Nanotechnology funded by the US National Science Foundation (NSF) (EEC-0228390), and the financial support from the US NSF (OCI-0749140), the US Army Research Office (W911NF-08-1-0527), and the Australian Research Council (ARC) Centre of Excellence for Quantum Computation and Communication Technology (CE110001027). H. Ryu, S. Lee and G. Klimeck acknowledge the extensive use of computing resources provided by the TeraGrid computing resources supported by the National Institute for Computational Sciences, and the Texas Advanced Computing Center. H. Ryu acknowledges the extensive use of TACHYON-II clusters supported by the National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information, and the support from the EDucation-research Integration through Simulation On the Net (EDISON) project funded by the Ministry of Education, Science and Technology, Republic of Korea (Grant #.: 2011-0020576). M. Y. Simmons acknowledges an ARC Federation Fellowship and support from the US Semiconductor Research Corporation.