Conference Proceedings
Electrically injected GaAsBi quantum well lasers
SJ Sweeney, IP Marko, SR Jin, K Hild, Z Batool, P Ludewig, L Natterman, Z Bushell, W Stolz, K Volz, CA Broderick, M Usman, PE Harnedy, EP Oreilly, R Butkute, V Pacebutas, A Geiutis, A Krotkus
Conference Digest IEEE International Semiconductor Laser Conference | Published : 2014
Abstract
GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.