Journal article

Highly tunable exchange in donor qubits in silicon

Yu Wang, Archana Tankasala, Lloyd CL Hollenberg, Gerhard Klimeck, Michelle Y Simmons, Rajib Rahman

NPJ QUANTUM INFORMATION | NATURE PUBLISHING GROUP | Published : 2016

Abstract

In this article we have investigated the electrical control of the exchange coupling (J) between donor-bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We found that the asymmetric 2P–1P system provides a highly tunable exchange curve with mitigated J-oscillation, in which 5 orders of magnitude change in the exchange coupling can be achieved using a modest range of electric field (3 MV/m) for ~ 15-nm qubit separation. Compared with the barrier gate control of exchange in the Kane qubit, the detuning gate design reduces the gate density by a factor of ~ 2. By combining large-scale atomistic tight-binding ..

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University of Melbourne Researchers

Grants

Awarded by Army Research Office (ARO)


Awarded by Australian Research Council (ARC)


Awarded by National Science Foundation (NSF)


Funding Acknowledgements

This study was funded by the Army Research Office (ARO)-W911NF-08-1-0527, the Australian Research Council (ARC)-CE110001027 and the National Science Foundation (NSF) grant EEC-0228390, NSF ACI 1238993 and NSF OCI-0832623.