Journal article
Solution processed graphene-silicon Schottky junction solar cells
LJ Larsen, CJ Shearer, AV Ellis, JG Shapter
Rsc Advances | ROYAL SOC CHEMISTRY | Published : 2015
DOI: 10.1039/c5ra03965g
Abstract
Here, surfactant-assisted exfoliated graphene (SAEG) has been used to make transparent conducting graphene films which for the first time were used to make SAEG-silicon Schottky junctions for photovoltaics. The graphene films were characterised using UV-Vis spectroscopy, Raman spectroscopy, atomic force microscopy and four point probe sheet resistance measurements. The effects of film thickness, thermal annealing and chemical doping of the graphene films on the power conversion efficiency (PCE) of the cells were investigated. Mild annealing of thickness optimised films resulted in a doubling of the PCE. Additionally, chemical doping resulted in a further 300% increase of the peak PCE. These ..
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Funding Acknowledgements
This work was supported by the Australian Microscopy and Microanalysis Research Facility (AMMRF). This work was also performed in part at the Flinders University node of the Australian National Fabrication Facility, a company established under the National Collaborative Research Infrastructure Strategy to provide nano-and micro-fabrication facilities for Australia's researchers. LL would also like to thank the Australian Government for an APA scholarship.