Surface-gate-defined single-electron transistor in a MoS2 bilayer
M Javaid, Daniel W Drumm, Salvy P Russo, Andrew D Greentree
NANOTECHNOLOGY | IOP PUBLISHING LTD | Published : 2017
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS2 bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS2 bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.
Related Projects (1)
Awarded by ARC Discovery Grant
Awarded by ARC Centre of Excellence for Nanoscale BioPhotonics
Awarded by ARC Centre of Excellence in Exciton Science
MJ and ADG acknowledge funding by ARC Discovery Grant No. DP130104381. DWD acknowledges the support of the ARC Centre of Excellence for Nanoscale BioPhotonics (CE140100003). SPR acknowledges the support of the ARC Centre of Excellence in Exciton Science (CE170100026). This work was supported by computational resources provided by the Australian Government through the National Computational Infrastructure under the National Computational Merit Allocation Scheme.