Journal article
Preparation and properties of GaN films on Si(111) substrates
Y Yang, H Ma, X Hao, J Ma, C Xue, H Zhuang
Science in China Series G Physics Astronomy | SCIENCE CHINA PRESS | Published : 2003
DOI: 10.1360/03yg9023
Abstract
High-quality gallium nitride (GaN) films were prepared on Si(111) substrates by sputtering post-annealing-reaction technique. XRD, XPS, and SEM measurement results indicate that polycrystalline GaN with hexagonal structure was successfully prepared. Intense room- temperature photoluminescence that peaked at 354 nm of the films is observed. The bandgap of these films has a blueshift with respect to bulk GaN.