Electronic properties of δ -doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method

Abstract

We present a scalable method for calculating the electronic properties of a δ-doped phosphorus layer in silicon and germanium. Our calculations are based on an sp3d5s* tight-binding model and the Thomas-Fermi-Dirac approximation. The energy shift in the lowest conduction band states of the Ge band structure is characterized and a comparison is made to a δ-doped P layer in Si. The results for the δ-doped Si:P layer themselves compare well to the predictions of more "resource intensive" computational models. The Thomas-Fermi method presented herein scales easily to large system sizes. Efficient scaling is important for the calculation of quantum transport properties in δ-doped semiconductors t..