Electronic properties of delta-doped Si:P and Ge:P layers in the high-density limit using a Thomas-Fermi method
JS Smith, JH Cole, SP Russo
Physical Review B | AMER PHYSICAL SOC | Published : 2014
The authors thank A. Budi and D. W. Drumm for useful discussions. The authors acknowledge the support of the NCI National Facility, Canberra, Australia.