Conference Proceedings

Gas sensing properties of p-type semiconducting Cr-doped TiO2 thin films

YX Li, W Wlodarski, K Galatsis, SH Moslih, J Cole, S Russo, N Rockelmann

SENSORS AND ACTUATORS B-CHEMICAL | ELSEVIER SCIENCE SA | Published : 2002

Abstract

Cr2O3-TiO2 thin films were prepared from the sol-gel process. Titanium butoxide was used as the precursor material. The solution was mixed with a chromium compound then spun onto sapphire and silicon substrates at 2500rpm for 30s. The films were annealied at temperatures of between 400 and 700 °C for 1h. The X-ray diffraction (XRD), scanning electronic microscope (SEM), Rutherford backscatter spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) techniques were employed for microstructural characterazations. The responses to both NO2 and O2 gases confirmed that the films are of a p-type behaviour at operating temperatures between 350 and 400 °C. The films showed a good response to ox..

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