Depth profiles of hydrogen and oxygen in hydrogenated amorphous silicon thin films

Abstract

Detailed depth profiles of hydrogen and oxygen have been measured in samples of thin films of a-Si: H produced by dc magnetron glow discharge techniques. The resonant capture reaction 1H(19F, αγ)16O at E19v = 6.417 MeV was used for hydrogen profile measurements, and resonant α scattering at Eα = 3.0359 MeV was used for oxygen. Contrasting results reflecting the different fabrication conditions were obtained and these were correlated with measured electrical properties. © 1986.