Journal article
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
T Burgess, D Saxena, S Mokkapati, Z Li, CR Hall, JA Davis, Y Wang, LM Smith, L Fu, P Caroff, HH Tan, C Jagadish
Nature Communications | NATURE PUBLISHING GROUP | Published : 2016
DOI: 10.1038/ncomms11927
Abstract
Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times whil..
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Awarded by National Science Foundation
Funding Acknowledgements
This research was supported by the Australian Research Council. We thank the Australian National Fabrication Facility for access to the growth and microscopy facilities and the Centre for Advanced Microscopy and Australian Microscopy and Microanalysis Research Facility for access to microscopy facilities used in this work. We also acknowledge F. Wang for his technical assistance with the PL measurements and B. Badada and T. Shi for their assistance in characterizing the doped samples. We also acknowledge the financial support of the National Science Foundation through grants DMR 1507844, DMR 151373 and ECCS 1509706.