Journal article

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Zhe Li, Christopher R Hall, Jeffrey A Davis, Yuda Wang, Leigh M Smith, Lan Fu, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish

Nature Communications | NATURE PUBLISHING GROUP | Published : 2016

University of Melbourne Researchers

Grants

Awarded by National Science Foundation


Awarded by Direct For Mathematical & Physical Scien


Awarded by Directorate For Engineering


Awarded by Division Of Materials Research


Awarded by Div Of Electrical, Commun & Cyber Sys


Funding Acknowledgements

This research was supported by the Australian Research Council. We thank the Australian National Fabrication Facility for access to the growth and microscopy facilities and the Centre for Advanced Microscopy and Australian Microscopy and Microanalysis Research Facility for access to microscopy facilities used in this work. We also acknowledge F. Wang for his technical assistance with the PL measurements and B. Badada and T. Shi for their assistance in characterizing the doped samples. We also acknowledge the financial support of the National Science Foundation through grants DMR 1507844, DMR 151373 and ECCS 1509706.