Journal article

Wafer-Scale Synthesis of Semiconducting SnO Monolayers from Interfacial Oxide Layers of Metallic Liquid Tin

Torben Daeneke, Paul Atkin, Rebecca Orrell-Trigg, Ali Zavabeti, Taimur Ahmed, Sumeet Walia, Maning Liu, Yasuhiro Tachibana, Maria Javaid, Andrew D Greentree, Salvy P Russo, Richard B Kaner, Kourosh Kalantar-Zadeh

ACS NANO | AMER CHEMICAL SOC | Published : 2017


Atomically thin semiconductors are one of the fastest growing categories in materials science due to their promise to enable high-performance electronic and optical devices. Furthermore, a host of intriguing phenomena have been reported to occur when a semiconductor is confined within two dimensions. However, the synthesis of large area atomically thin materials remains as a significant technological challenge. Here we report a method that allows harvesting monolayer of semiconducting stannous oxide nanosheets (SnO) from the interfacial oxide layer of liquid tin. The method takes advantage of van der Waals forces occurring between the interfacial oxide layer and a suitable substrate that is ..

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Awarded by ARC Centre of Excellence in Exciton Science

Awarded by ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET)

Funding Acknowledgements

The authors acknowledge the facilities, and the scientific and technical assistance, of the Australian Microscopy & Microanalysis Research Facility at the RMIT Microscopy & Microanalysis Facility and the Micro Nano Research Facility at RMIT University. T.D. acknowledges funds received from RMIT University through the Vice Chancellor's research fellow scheme. S.P.R acknowledges the support of the ARC Centre of Excellence in Exciton Science (CE170100026). This work was supported by computational resources provided by the Australian Government through the National Computational Infrastructure National Facility and the Pawsey Supercomputer Centre. K.K.Z. and T.D. acknowledge funding received from the ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) (CE170100039).