Journal article

Molecular beam epitaxial growth of CoSi2 on porous Si

YC Kao, KL Wang, BJ Wu, TL Lin, CW Nieh, D Jamieson, G Bai

Applied Physics Letters | Published : 1987


CoSi2 epitaxial layers with different thicknesses have been grown onto porous-Si substrates by molecular beam epitaxy. Good crystallinity is obtained for CoSi2 films thicker than 50 nm. The use of a thin buffer layer is found to be crucial in order to achieve abrupt interface and good crystallinity. Planar view transmission electron microscope images obtained from 30-nm-thick CoSi2 buffer-Si/porous-Si samples indicate that a large area of the epitaxial film is dislocation free, in contrast with a uniform distribution of misfit dislocations across relaxed CoSi2/single- crystal Si samples of the same thickness. This study suggests a possible pseudomorphic growth by using porous Si as a substra..

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University of Melbourne Researchers

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