Journal article
Room temperature in-plane ferroelectricity in van der Waals In2Se3
C Zheng, L Yu, L Zhu, JL Collins, D Kim, Y Lou, C Xu, M Li, Z Wei, Y Zhang, MT Edmonds, S Li, J Seidel, Y Zhu, JZ Liu, WX Tang, MS Fuhrer
Science Advances | AMER ASSOC ADVANCEMENT SCIENCE | Published : 2018
Open access
Abstract
Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, b′-In2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Su..
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Awarded by Australian National Fabrication Facility
Funding Acknowledgements
C.Z. thanks the support from Australian Research Council (ARC) Discovery Early Career Researcher Award (DE140101555). M.S.F. acknowledges the support from ARC DP150103837. M.T.E. is funded by ARC DE160101157. C.X. and Y.Z. are supported by the Hong Kong Research Grants Council through the Early Career Scheme (project no. 25301617) and the Hong Kong Polytechnic University grant (project no. 1-ZE6G). J.S. acknowledges the support from ARC DP140102849. J.Z.L. and Y.L. acknowledge the high-performance computing facilities from the National Computational Infrastructure through the National Computational Merit Allocation Scheme scheme. W.-X.T. is financially supported by the National Natural Science Foundation of China as National Key Instrumental Development Scheme (no. A04-11227802), 985 Key National University Funding at Chongqing University (nos. 0211001104414 and 0211001104423), and Science and Technology Innovation Projects at Chongqing University (no. 0211005202084). J.L.C. acknowledges the support from the Monash Centre for Atomically Thin Materials and from ARC CE170100039.Y.Z. is supported by the National Nature Science Foundation of China (51702219). This work was performed, in part, at the Melbourne Centre for Nanofabrication in the Victorian Node of the Australian National Fabrication Facility.