Journal article
Measurements and atomistic theory of electron g -factor anisotropy for phosphorus donors in strained silicon
M Usman, H Huebl, AR Stegner, CD Hill, MS Brandt, LCL Hollenberg
Physical Review B | AMER PHYSICAL SOC | Published : 2018
Abstract
This work reports the measurement of electron g-factor anisotropy (|Δg|=|g001-g110|) for phosphorous donor qubits in strained silicon (sSi = Si/Si1-xGex) environments. Multimillion-atom tight-binding simulations are performed to understand the measured decrease in |Δg| as a function of x, which is attributed to a reduction in the interface-related anisotropy. For x<7%, the variation in |Δg| is linear and can be described by ηxx, where ηx≈1.62×10-3. At x=20%, the measured |Δg| is 1.2±0.04×10-3, which is in good agreement with the computed value of 1×10-3. When strain and electric fields are applied simultaneously, the strain effect is predicted to play a dominant role on |Δg|. Our results pro..
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Grants
Awarded by Appalachian Regional Commission
Funding Acknowledgements
This work is funded by the ARC Center of Excellence for Quantum Computation and Communication Technology (Grant No. CE1100001027), and in part by the U.S. Army Research Office (Grant No. W911NF-08-1-0527). H.H. and M.S.B. acknowledge financial support via the DPG priority programme SPP1601 (Grants No. HU1896/2 and No. BR1585/8) and the Collaborative Research Center Grant No. SFB631. Computational resources from NCN/Nanohub are acknowledged. This work was supported by the computational resources provided by the Pawsey Supercomputing Center (Magnus cluster) and National Computational Infrastructure (Raijin cluster) through the National Computational Merit Allocation Scheme (NCMAS).