Journal article

Measurements and atomistic theory of electron g-factor anisotropy for phosphorus donors in strained silicon

M Usman, H Huebl, AR Stegner, CD Hill, MS Brandt, LCL Hollenberg

Physical review B: Condensed matter and materials physics | AMER PHYSICAL SOC | Published : 2018

Grants

Awarded by ARC Center of Excellence for Quantum Computation and Communication Technology


Awarded by U.S. Army Research Office


Awarded by DPG priority programme


Awarded by Collaborative Research Center Grant


Funding Acknowledgements

This work is funded by the ARC Center of Excellence for Quantum Computation and Communication Technology (Grant No. CE1100001027), and in part by the U.S. Army Research Office (Grant No. W911NF-08-1-0527). H.H. and M.S.B. acknowledge financial support via the DPG priority programme SPP1601 (Grants No. HU1896/2 and No. BR1585/8) and the Collaborative Research Center Grant No. SFB631. Computational resources from NCN/Nanohub are acknowledged. This work was supported by the computational resources provided by the Pawsey Supercomputing Center (Magnus cluster) and National Computational Infrastructure (Raijin cluster) through the National Computational Merit Allocation Scheme (NCMAS).