Journal article

Solution-Processed Transparent Self-Powered p-CuS-ZnS/n-ZnO UV Photodiode

X Xu, S Shukla, Y Liu, B Yue, J Bullock, L Su, Y Li, A Javey, X Fang, JW Ager

Physica Status Solidi Rapid Research Letters | WILEY-V C H VERLAG GMBH | Published : 2018

Abstract

Transparent diodes formed by a heterojunction between p-type CuS–ZnS and n-type ZnO thin films were fabricated by sequential chemical bath deposition and sol-gel spin coating. The diodes are transparent in the visible (≈70% at 550 nm) and exhibit a good rectifying characteristics, with If/Ir ratios of up to 800 at ±1 V, higher than most of the reported solution-processed diodes measured at a similar bias. More importantly, when operated as a self-powered (zero bias) UV photodetector, they show stable and fast (<1 s) photoresponse with a maximum responsivity of 12 mA W−1 at 300 nm. Both the response time and responsivity of the p-CuZnS/n-ZnO UV photodiode are comparable or superior to similar..

View full abstract

University of Melbourne Researchers

Grants

Awarded by U.S. Department of Energy


Funding Acknowledgements

The authors appreciate helpful discussions and technical support from Min Ting. Spin coating, chemical bath deposition, and electronic characterization were performed in the Electronic Materials Program, which is supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. Diode fabrication and characterization were supported by the Department of Energy through the Bay Area Photovoltaic Consortium under Award Number DE-EE0004946. Use of the Advanced Light Source at Lawrence Berkeley National Laboratory was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No. DE-AC02-76SF00515. Design and opto-electronic characterization of the UV photodiode were supported by National Natural Science Foundation of China (Grant Nos. 51471051 and 11674061), Science and Technology Commission of Shanghai Municipality (15520720700). XX acknowledges fellowship support from the Chinese Scholarship Council.