Conference Proceedings
Characterisation of sputtering deposited amorphous silicon films for silicon heterojunction solar cells
X Zhang, A Cuevas, J Bullock
Conference Record of the IEEE Photovoltaic Specialists Conference | IEEE | Published : 2016
Abstract
This work investigates intrinsic and doped amorphous silicon films deposited by RF sputtering. The correlation between surface passivation and the a-Si:H film properties are explored. It has been found that the passivation depends on both the incorporated hydrogen concentration and the bonding configuration. Furthermore, conductivity measurement are performed on the doped a-Si:H by sputtering for the first time. It has been confirmed that p and n-type doping can be achieved by using boron or phosphorus doped Si targets. However, further work on dopant activation is required to achieve the higher doping levels necessary for high efficiency devices.
Grants
Funding Acknowledgements
This work has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA). Responsibility for the views, information or advice expressed herein is not accepted by the Australian Government. The first author is also funded by Jinko Solar for the publication support and the travel expense.