Journal article
Grown-in defects limiting the bulk lifetime of p -type float-zone silicon wafers
NE Grant, FE Rougieux, D MacDonald, J Bullock, Y Wan
Journal of Applied Physics | AMER INST PHYSICS | Published : 2015
DOI: 10.1063/1.4907804
Abstract
We investigate a recombination active grown-in defect limiting the bulk lifetime (τbulk) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80°C and 400°C, τbulk was found to increase from ∼500μs to ∼1.5ms. By isochronal annealing the p-type samples between 80°C and 400°C for 30 min, the annihilation energy (Eann) of the defect was determined to be 0.3
Grants
Funding Acknowledgements
This work has been supported by the Australian Renewable Energy Agency (ARENA) fellowships program and the Australian Research Council (ARC) Future Fellowships program. Responsibility for the views, information, or advice expressed herein is not accepted by the Australian Government.