Determining specific contact resistivity of contacts to bulk semiconductor using a two-contact circular test structure

Abstract

We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p+-type germanium (Ge) substrates. The SCR obtained was (2.3-27) ×10-6 Ω·cm2 © 2014 IEEE.