Conference Proceedings
Low specific contact resistivity nickel to silicon carbide determined using a two contact circular test structure
Y Pan, AM Collins, PW Leech, GK Reeves, AS Holland, P Tanner
IEEE International Conference on Microelectronic Test Structures | IEEE | Published : 2014
Abstract
We present the experimentally determined specific contact resistivity of as deposited nickel to highly doped n-type 3-C silicon carbide using a novel test structure. The specific contact resistivity, extracted using this test structure and the corresponding methodology, is (0.8-5.7)×10-6 Ω.cm2. © 2014 IEEE.