Optimizing the vacuum growth of epitaxial graphene on 6H-SiC
Toby Hopf, Konstantin Vassilevski, Enrique Escobedo-Cousin, Nick Wright, Anthony O'Neill, Alton Horsfall, Jonathan Goss, Anders Barlow, George Wells, Michael Hunt, H Okumura (ed.), H Harima (ed.), T Kimoto (ed.), M Yoshimoto (ed.), H Watanabe (ed.), T Hatayama (ed.), H Matsuura (ed.), T Funaki (ed.), Y Sano (ed.)
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | TRANS TECH PUBLICATIONS LTD | Published : 2014
Multilayer epitaxial graphene has been grown on the Si-face of 6H-SiC on-axis commercial substrates under high vacuum conditions and at growth temperatures up to 1900 °C, utilizing the standard sublimation growth technique and a modified SiC rapid thermal annealing system which allows for excellent control of heating and cooling ramp rates. The peak growth temperature and total growth time during the graphene growth step, along with the temperature of the initial substrate etch step, were all systematically varied in order to ascertain their effect on the formation of epitaxial graphene films on the SiC surface. Modifying the substrate etch temperature was found to have a significant impact ..View full abstract
Awarded by Leverhulme Trust
This work was supported by the Leverhulme Trust (F/00 125/AN). XPS spectra were obtained at the National EPSRC XOS User's Service (NEXUS) at Newcastle University, an EPSRC Mid-Range Facility.