Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices
BJ Murdoch, TJ Raeber, AJ Barlow, DG McCulloch, JG Partridge
Applied Physics Letters | AMER INST PHYSICS | Published : 2018
The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.
Awarded by Australian Research Council
The authors gratefully acknowledge the Australian Research Council for financial support (Discovery Project No. DP170102086) and thank Dr. Matthew Field and Dr. Edwin Mayes from the RMIT microscopy and microanalysis facility for assisting with the TEM experiments. This work was performed in part at the Australian National Fabrication Facility (ANFF), a company established under the National Collaborative Research Infrastructure Strategy, through the La Trobe University Centre for Materials and Surface Science.