Journal article

Spatial mapping of band bending in semiconductor devices using in situ quantum sensors

DA Broadway, N Dontschuk, A Tsai, SE Lillie, CT-K Lew, JC McCallum, BC Johnson, MW Doherty, A Stacey, LCL Hollenberg, J-P Tetienne



Local variations in the charge distribution at semiconductor interfaces can lead to energy level band bending in the structure’s band diagram. Measuring this band bending is important in semiconductor electronics and quantum technologies, but current methods are typically only surface sensitive and are unable to probe the extent of band bending at a depth within the semiconductor. Here, we show that nitrogen–vacancy centres in diamond can be used as in situ sensors to spatially map band bending in a semiconductor device. These nitrogen–vacancy quantum sensors probe the electric field associated with surface band bending, and we map the electric field at different depths under various surface..

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Awarded by Australian Research Council

Funding Acknowledgements

We thank M. Barson, D. Simpson and L. Hall for useful discussions. We acknowledge support from the Australian Research Council (grants CE110001027, DE170100129, FL130100119, DP170102735). J.-P.T acknowledges support from the University of Melbourne through an Early Career Researcher Grant. D.A.B, A.T, S.E.L and C.T.-K.L are supported by an Australian Government Research Training Program Scholarship. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF).